High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors.
Identifieur interne : 000168 ( Main/Exploration ); précédent : 000167; suivant : 000169High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors.
Auteurs : RBID : pubmed:24511184Abstract
Amorphous mixed metal oxides are emerging as high performance semiconductors for thin film transistor (TFT) applications, with indium gallium zinc oxide, InGaZnO (IGZO), being one of the most widely studied and best performing systems. Here, we investigate alkaline earth (barium or strontium) doped InBa(Sr)ZnO as alternative, semiconducting channel layers and compare their performance of the electrical stress stability with IGZO. In films fabricated by solution-processing from metal alkoxide precursors and annealed to 450 °C we achieve high field-effect electron mobility up to 26 cm(2) V(-1) s(-1). We show that it is possible to solution-process these materials at low process temperature (225-200 °C yielding mobilities up to 4.4 cm(2) V(-1) s(-1)) and demonstrate a facile "ink-on-demand" process for these materials which utilizes the alcoholysis reaction of alkyl metal precursors to negate the need for complex synthesis and purification protocols. Electrical bias stress measurements which can serve as a figure of merit for performance stability for a TFT device reveal Sr- and Ba-doped semiconductors to exhibit enhanced electrical stability and reduced threshold voltage shift compared to IGZO irrespective of the process temperature and preparation method. This enhancement in stability can be attributed to the higher Gibbs energy of oxidation of barium and strontium compared to gallium.
DOI: 10.1021/cm4035837
PubMed: 24511184
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors.</title><author><name sortKey="Banger, Kulbinder K" uniqKey="Banger K">Kulbinder K Banger</name><affiliation wicri:level="1"><nlm:affiliation>Cavendish Laboratory, Department of Physics, University of Cambridge , Cambridge CB3 0HE, United Kingdom.</nlm:affiliation><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Cavendish Laboratory, Department of Physics, University of Cambridge , Cambridge CB3 0HE</wicri:regionArea></affiliation></author><author><name sortKey="Peterson, Rebecca L" uniqKey="Peterson R">Rebecca L Peterson</name><affiliation wicri:level="1"><nlm:affiliation>Cavendish Laboratory, Department of Physics, University of Cambridge , Cambridge CB3 0HE, United Kingdom.</nlm:affiliation><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Cavendish Laboratory, Department of Physics, University of Cambridge , Cambridge CB3 0HE</wicri:regionArea></affiliation></author><author><name sortKey="Mori, Kiyotaka" uniqKey="Mori K">Kiyotaka Mori</name><affiliation wicri:level="1"><nlm:affiliation>Panasonic Corporation , Osaka 571-8501, Japan.</nlm:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>Panasonic Corporation , Osaka 571-8501</wicri:regionArea></affiliation></author><author><name sortKey="Yamashita, Yoshihisa" uniqKey="Yamashita Y">Yoshihisa Yamashita</name><affiliation wicri:level="1"><nlm:affiliation>Panasonic Corporation , Osaka 571-8501, Japan.</nlm:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>Panasonic Corporation , Osaka 571-8501</wicri:regionArea></affiliation></author><author><name sortKey="Leedham, Timothy" uniqKey="Leedham T">Timothy Leedham</name><affiliation wicri:level="1"><nlm:affiliation>Multivalent Ltd. , Eriswell, Suffolk IP27 9BJ, United Kingdom.</nlm:affiliation><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Multivalent Ltd. , Eriswell, Suffolk IP27 9BJ</wicri:regionArea></affiliation></author><author><name sortKey="Sirringhaus, Henning" uniqKey="Sirringhaus H">Henning Sirringhaus</name><affiliation wicri:level="1"><nlm:affiliation>Cavendish Laboratory, Department of Physics, University of Cambridge , Cambridge CB3 0HE, United Kingdom.</nlm:affiliation><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Cavendish Laboratory, Department of Physics, University of Cambridge , Cambridge CB3 0HE</wicri:regionArea></affiliation></author></titleStmt><publicationStmt><date when="2014">2014</date><idno type="doi">10.1021/cm4035837</idno><idno type="RBID">pubmed:24511184</idno><idno type="pmid">24511184</idno><idno type="wicri:Area/Main/Corpus">000173</idno><idno type="wicri:Area/Main/Curation">000173</idno><idno type="wicri:Area/Main/Exploration">000168</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Amorphous mixed metal oxides are emerging as high performance semiconductors for thin film transistor (TFT) applications, with indium gallium zinc oxide, InGaZnO (IGZO), being one of the most widely studied and best performing systems. Here, we investigate alkaline earth (barium or strontium) doped InBa(Sr)ZnO as alternative, semiconducting channel layers and compare their performance of the electrical stress stability with IGZO. In films fabricated by solution-processing from metal alkoxide precursors and annealed to 450 °C we achieve high field-effect electron mobility up to 26 cm(2) V(-1) s(-1). We show that it is possible to solution-process these materials at low process temperature (225-200 °C yielding mobilities up to 4.4 cm(2) V(-1) s(-1)) and demonstrate a facile "ink-on-demand" process for these materials which utilizes the alcoholysis reaction of alkyl metal precursors to negate the need for complex synthesis and purification protocols. Electrical bias stress measurements which can serve as a figure of merit for performance stability for a TFT device reveal Sr- and Ba-doped semiconductors to exhibit enhanced electrical stability and reduced threshold voltage shift compared to IGZO irrespective of the process temperature and preparation method. This enhancement in stability can be attributed to the higher Gibbs energy of oxidation of barium and strontium compared to gallium.</div></front></TEI><pubmed><MedlineCitation Status="Publisher" Owner="NLM"><PMID Version="1">24511184</PMID><DateCreated><Year>2014</Year><Month>2</Month><Day>10</Day></DateCreated><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Print">0897-4756</ISSN><JournalIssue CitedMedium="Print"><Volume>26</Volume><Issue>2</Issue><PubDate><Year>2014</Year><Month>Jan</Month><Day>28</Day></PubDate></JournalIssue><Title>Chemistry of materials : a publication of the American Chemical Society</Title><ISOAbbreviation>Chem Mater</ISOAbbreviation></Journal><ArticleTitle>High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors.</ArticleTitle><Pagination><MedlinePgn>1195-1203</MedlinePgn></Pagination><Abstract><AbstractText NlmCategory="UNLABELLED">Amorphous mixed metal oxides are emerging as high performance semiconductors for thin film transistor (TFT) applications, with indium gallium zinc oxide, InGaZnO (IGZO), being one of the most widely studied and best performing systems. Here, we investigate alkaline earth (barium or strontium) doped InBa(Sr)ZnO as alternative, semiconducting channel layers and compare their performance of the electrical stress stability with IGZO. In films fabricated by solution-processing from metal alkoxide precursors and annealed to 450 °C we achieve high field-effect electron mobility up to 26 cm(2) V(-1) s(-1). We show that it is possible to solution-process these materials at low process temperature (225-200 °C yielding mobilities up to 4.4 cm(2) V(-1) s(-1)) and demonstrate a facile "ink-on-demand" process for these materials which utilizes the alcoholysis reaction of alkyl metal precursors to negate the need for complex synthesis and purification protocols. Electrical bias stress measurements which can serve as a figure of merit for performance stability for a TFT device reveal Sr- and Ba-doped semiconductors to exhibit enhanced electrical stability and reduced threshold voltage shift compared to IGZO irrespective of the process temperature and preparation method. This enhancement in stability can be attributed to the higher Gibbs energy of oxidation of barium and strontium compared to gallium.</AbstractText></Abstract><AuthorList><Author><LastName>Banger</LastName><ForeName>Kulbinder K</ForeName><Initials>KK</Initials><Affiliation>Cavendish Laboratory, Department of Physics, University of Cambridge , Cambridge CB3 0HE, United Kingdom.</Affiliation></Author><Author><LastName>Peterson</LastName><ForeName>Rebecca L</ForeName><Initials>RL</Initials><Affiliation>Cavendish Laboratory, Department of Physics, University of Cambridge , Cambridge CB3 0HE, United Kingdom.</Affiliation></Author><Author><LastName>Mori</LastName><ForeName>Kiyotaka</ForeName><Initials>K</Initials><Affiliation>Panasonic Corporation , Osaka 571-8501, Japan.</Affiliation></Author><Author><LastName>Yamashita</LastName><ForeName>Yoshihisa</ForeName><Initials>Y</Initials><Affiliation>Panasonic Corporation , Osaka 571-8501, Japan.</Affiliation></Author><Author><LastName>Leedham</LastName><ForeName>Timothy</ForeName><Initials>T</Initials><Affiliation>Multivalent Ltd. , Eriswell, Suffolk IP27 9BJ, United Kingdom.</Affiliation></Author><Author><LastName>Sirringhaus</LastName><ForeName>Henning</ForeName><Initials>H</Initials><Affiliation>Cavendish Laboratory, Department of Physics, University of Cambridge , Cambridge CB3 0HE, United Kingdom.</Affiliation></Author></AuthorList><Language>ENG</Language><PublicationTypeList><PublicationType>JOURNAL ARTICLE</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2013</Year><Month>12</Month><Day>22</Day></ArticleDate></Article><MedlineJournalInfo><MedlineTA>Chem Mater</MedlineTA><NlmUniqueID>9884133</NlmUniqueID><ISSNLinking>0897-4756</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="received"><Year>2013</Year><Month>10</Month><Day>29</Day></PubMedPubDate><PubMedPubDate PubStatus="epublish"><Year>2013</Year><Month>12</Month><Day>22</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2014</Year><Month>2</Month><Day>11</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2014</Year><Month>2</Month><Day>11</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2014</Year><Month>2</Month><Day>11</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1021/cm4035837</ArticleId><ArticleId IdType="pubmed">24511184</ArticleId><ArticleId IdType="pmc">PMC3914394</ArticleId></ArticleIdList><pmc-dir>pmcsd</pmc-dir>
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